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영문 논문지

홈 홈 > 연구문헌 > 영문 논문지 > JSTS (Journal of Semiconductor Technology and Science)

JSTS (Journal of Semiconductor Technology and Science)

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한글제목(Korean Title) Particle Simulation of Ionic Screening Effects in Electrolyte-insulator-semiconductor Field-effect Transistors
영문제목(English Title) Particle Simulation of Ionic Screening Effects in Electrolyte-insulator-semiconductor Field-effect Transistors
저자(Author) In-Young Chung   Munkyo Seo   Chan Hyeong Park                             
원문수록처(Citation) VOL 19 NO. 04 PP. 0311 ~ 0320 (2019. 08)
한글내용
(Korean Abstract)
영문내용
(English Abstract)
We conduct particle simulations to investigate the screening effect of electrolyte ions in electrolyte-insulator-semiconductor field-effect transistors. The dependency of the ionic screening effect on the distance of a charged target molecule or object from the electrolyte-insulator interface is studied in high frequency as well as low frequency regions. The electric transfer coefficient defined as the ratio of the channel charge to the target one is simulated. It is found that the frequency region where its magnitude and phase change appreciably, coincides with the corner frequency of the Lorentzian noise spectrum originating from electrolyte ionic thermal motions. A simple capacitance model is presented to understand the frequency dependence of the ionic screening effect. It is found that the ionic screening effect can be overcome by the highfrequency oscillation of target molecules.
키워드(Keyword) Ionic screening   electrolyte   field-effect transistor   Monte Carlo method   electrical noise                 
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